Tin dioxide sol–gel derived thin films deposited on porous silicon
نویسندگان
چکیده
Undoped and Sb-doped SnO2 sol–gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). The evolution of the Sn–O chemical bonds in the SnO2 during film consolidation treatments was monitored by infrared spectroscopy. By energy dispersive X-ray spectroscopy performed on the cross section of the porosified silicon coupled with transmission electron microscopy, the penetration of the SnO2 sol–gel derived films in the nanometric pores of the porous silicon has been experimentally proved. © 1997 Elsevier Science S.A.
منابع مشابه
Laser transfer of sol–gel ferroelectric thin films using an ITO release layer
A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate. The thin film ferroelectric material is deposited on a fused silica growth substrate with a sacrificial release layer of ITO (indium tin oxide). Regions of the film that are to be transferred are then selectively metallised, and bonded to...
متن کاملEffects of UV irradiation treated polycarbonate substrates on properties of nanocrystalline TiO2 sol-gel derived thin films
In this study, in order to achieve effective coating of the homogeneous titanium dioxide (TiO2) thin film, UV irradiation pre-treatment was carried out to activate PC surfaces before coating. Sol-gel-based nanocrystalline TiO2 thin films were prepared by employing tetrabutyl-titanate as a precursor. Nanocrystalline TiO2 thin films were deposited by sol-gel spin coating on the treated substrates...
متن کاملDeposition of High Quality Sol-Gel Oxides on Silicon
We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<10H/cm2eV) and very low densities of slow interface state (<101~ 2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on si...
متن کاملSol – Gel Spin Coated Cadmium Sulphide Thin Films on Silicon (1 0 0) Substrates for Optoelectronic Applications
Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were deposited on p – type silicon substrates by sol – gel spin coating method at different substrate temperatures. The CdS deposited wafers were characterized by X‐ray diffracti...
متن کاملCharacterization of Ito Thin Films Prepared by Spinning Deposition Starting from a Sol-gel Process
ITO thin films were deposited by spin coating method starting from indium and tin propoxide in the frame of a sol-gel process. Films with the thickness corresponding to 68 nm for one layer deposition were produced and characterized by X-ray diffraction, transmission electron microscopy and infrared reflection spectroscopy. Low conductivity polycrystalline films exhibiting cubical structure (bix...
متن کامل